Curriculum Vitae

 

Randall L. Headrick

Assistant Professor

Department of Physics

The University of Vermont

Burlington, VT 05405

Office: 802-656-0048

E-mail: rheadrick@uvm.edu

 

Education             

PhD,                       Materials Science and Engineering, University of Pennsylvania, 1988

BS,                          Physics, Carnegie-Mellon University, 1982.

 

Professional interests

Kinetics of thin-film growth, and etching.  Real-time x-ray and electron diffraction studies of materials growth and surface evolution.

 

Professional record

2001-present         Department of Physics, University of Vermont, Assistant Professor

 

1991-2001               Cornell University, Ithaca, N.Y., Senior Staff Scientist, Cornell High Energy Synchrotron Source

       

1989-1991               AT&T Bell Laboratories, Murray Hill, NJ. Postdoctoral Member of Technical Staff, with Dr. Leonard Feldman

 

1982-1988               University of Pennsylvania, Philadelphia, PA  Graduate Research Associate

        Department of Materials Science and Engineering, with Professor William R. Graham. PhD Thesis title: “Geometric structure of adsorbate covered surfaces determined by medium energy ion scattering”.

 

 

Honors, awards, and acrivities

Visiting Assistant Professor, Department of Applied and Engineering Physics, Cornell University, 2001-present.

Consultant, AT&T Bell Laboratories, Murray Hill, NJ., 1991-1993

IBM Corporation Graduate Fellowship, 1985, 1986

University of Pennsylvania Graduate Fellowship, 1982

Member of the American Physical Society, the Materials Research Society, and the American Vacuum Society.

 

Publications

1.     “Non-Registered Silicon Produced at Metal-Silicon Interfaces by 14 MeV Oxygen Ions”, R.L. Headrick and L.E. Seiberling, Appl. Phys. Lett. 45, 288 (1984).

2.     “Disorder Production at Metal-Silicon Interfaces by MeV/amu Ion Irradiation”,  R.L. Headrick and L.E. Seiberling, Mat. Res. Soc. Symp. Proc. 35, 539 (1985).

3.      “MeV Ion Induced Modification of the Native Oxide of Silicon”,  R.L. Headrick and L.E. Seiberling,  Mat. Res. Soc. Symp. Proc. 51, 363 (1986).

4.     “A UHV-Compatible DE-E Gas Telescope for Depth Profiling and Surface Analysis of Light Elements”,  A.M. Behrooz, R.L. Headrick, L.E. Seiberling, and R.W. Zurmuhle, Nucl. Instrum. Meth. B 28, 108 (1987).

5.     “Medium-energy ion scattering study of the Si(111):As-1´1 surface”,  R.L. Headrick and W.R. Graham, J. Vac. Sci. Technol. A, 6 (3), 637 (1988).

6.     “Geometric Structure of the Si(111):As-1x1 Surface”,  R.L. Headrick and W.R. Graham, Phys. Rev. B 37, 1051 (1988).

7.     “Medium-energy Ion Scattering Study of the Initial Stage of Oxidation of  Fe(001)”,  R.L. Headrick, P. Konarski, S.M. Yalisove, and W.R. Graham, Phys. Rev B 39, 9 (1989).

8.     “Stability of Boron- and Gallium- Induced Surface Structures on Si(111)  During Deposition and Epitaxial Growth of Silicon”,   R.L. Headrick, L.C. Feldman, and I.K. Robinson, Appl. Phys. Lett., 55, 442 (1989).

9.     “Structure Determination of the Si(111):B (Ö 3´Ö 3) Surface: Subsurface Substitutional Doping”,  R.L. Headrick, I.K. Robinson, E. Vlieg, and L.C. Feldman, Phys. Rev. Lett., 63, 1253 (1989).

10.   “Influence of Surface Reconstruction on the Orientation of Homoepitaxial Silicon Films”,  R.L. Headrick, B.E. Weir,  J. Bevk, B.S. Freer, and L.C. Feldman, Phys. Rev. Lett.,  65, 1128, (1990).

11.   “Secondary Ion Mass Spectroscopy on  delta-doped GaAs grown by Molecular Beam Epitaxy”,  E.F. Shubert, H.S. H.S. Luftman, R.F. Kopf, R.L. Headrick, and J.M. Kuo, Appl. Phys. Lett., 57, 1799 (1990).

12.  “Surface States and Alkalai-to -Semiconductor Charge Transfer of the              K/Si(111)  (Ö 3´Ö 3) R30°-B System”,  Y. Ma, J.E. Rowe, E.E. Chaban, C.T. Chen, R.L. Headrick,  G.M. Meigs, S. Modesti, and F. Sette, Phys. Rev. Lett., 65, 2173 (1990).

13. “The Si(100)-(2x1) Boron Reconstruction: Self-Limiting Monolayer Doping”, R.L. Headrick, B.E. Weir, A.F.J. Levi, D.J. Eaglesham, and L.C. Feldman, Appl. Phys. Lett. 57,  2779 (1990).

14. “Energy Dependent Vibrational Spectra of the Si(111)-B Surface”,  J.E. Rowe, R.A. Malic, E.E. Chaban, R.L. Headrick, and L.C. Feldman, Journal of Electron Spectroscopy and Related Phenomena, 54, 1115 (1990).

15. “Electrical Conduction in the Si(111):B-(Ö 3´Ö 3)R30° Interface Reconstruction”,  R.L. Headrick, A.F.J. Levi,  H.S. Luftman, J. Kovalchick, and L.C. Feldman, Phys. Rev. B, 43, 14711, (1991).

16. “Low Temperature Homoepitaxy on  Si(111)”,  B.E. Weir, R.L. Headrick, J. Bevk, B.S. Freer, and L.C. Feldman, Appl. Phys. Lett.,  59, (2),  204 (1991).

17.  “Mechanically and Thermally Stable Si-Ge Films and  Heterojunction Bipolar Transistors Grown by RapidThermal Chemical Vapor Deposition (RTCVD) at 900°C”,  M.L. Green, B.E. Weir, D. Brasen, Y.F. Hseih, G. Higashi, A. Feygenson, L.C. Feldman, and R.L. Headrick,  J. Appl. Phys. 69 (2), 745 (1991).

18. “Ordered Monolayer Structures of boron in Si(111) and Si(100)”,   R.L. Headrick, B.E. Weir, A.F.J. Levi, B. Freer, J. Bevk, and L.C. Feldman, J. Vac. Sci. and Technol.,  A 9 (4), 2269  (1991).

19. “Buried, ordered structures: boron in Si(111) and Si(100)”, R.L. Headrick, B.E. Weir, A.F.J. Levi, D.J. Eaglesham, and L.C.  Feldman, Journal of Crystal Growth 111, 838 (1992).

20. “High-flux x-ray undulator radiation from proposed B  factory storage rings at Cornell University”,   D.H. Bilderback, B.W. Batterman, M.J. Bedzyk, J. Brock, K. Finkelstein, R. Headrick, and Q. Shen, Rev. Sci. Instrum. 63 (1), 1590 (1992).

21. “Boron-Silicon Alloy Delta Layer” ,   B.E Weir, R.L. Headrick, Q. Shen, L.C. Feldman, M. Needels, M.S. Hybertsen, M. Schlüter, and T.R. Hart, Phys. Rev. B 46, 12861 (1992).

22. “Silicon Epitaxy and Silicon Surfaces”,  L.C. Feldman, R.L. Headrick, and B.E. Weir,  in China Center of Advanced Science and Technology (World Laboratory) Symposium/Workshop Proceedings, Volume 9,  (Gordon and Breach,  Amsterdam, 1992).

23. “X-ray  and Raman Scattering Characterization of Ge/Si Buried Layers”,   R.L. Headrick, J.-M. Baribeau, D.J. Lockwood, T.E. Jackman, and M.J. Bedzyk, Appl. Phys. Lett.  62, 687 (1993).

24. “Influence of Annealing on the Interface Structure and Strain Relief in Si/Ge Heterostructures”,  D.J. Lockwood, J.-M. Baribeau, T.E. Jackman, P. Aebi, T. Tyliszczak, A.P. Hitchcock, and R.L. Headrick, Scanning Microscopy, 7, 457 (1993).

25. “Interface Roughness in  Ge/Si  Superlattices”,  R.L. Headrick and J.-M. Baribeau, J. Vac. Sci. and Technol. B, 11, 1514 (1993).

26. “Correlated Roughness in (Ge_mSi_n)_p Superlattices”,  R.L. Headrick and J.-M. Baribeau, Phys. Rev. B, 48, 9174 (1993).

27. “X-ray studies of low-temperature grown SiO₂ on Si”,  J.-M. Baribeau, D. Landheer, J.A. Bardwell, K.B. Clark, and R.L. Headrick, Interface Control of Electrical, Chemical, and Mechanical Properties Symposium, Mater. Res. Soc; Pittsburgh, PA, USA, p. 75 (1994).

28. “Interface phenomena in very thin Si-Ge heterostructures”,   J.-M. Baribeau, D.J. Lockwood, Z.-H. Lu, and R.L. Headrick, Mechanisms of Thin Film Evolution. Symposium. Mater. Res. Soc; Pittsburgh, PA, USA, p. 77 (1994).

29. “Interfacial Studies in Semicondutor Heterostructures by X-Ray Diffraction Techniques”,  J.-M. Baribeau, R.L. Headrick and P. Maigné, Scanning Microscopy, 8, 751 (1994).

30. “Electrical characterization of an ultrahigh concentration  boron delta-doping layer”, B.E. Weir, L.C. Feldman, D. Monroe, H.-J. Gossmann, R.L. Headrick, T.R. Hart, Applied Physics Letters, 65, (6),  737 (1994).

31. “Redesigned front end for the upgrade at CHESS”, R.L. Headrick and K.W. Smolenski, Rev. Sci. Instrum. 67, 1 (1995).

32. “Roughness in Si_1-xGe_x/Si Superlattices: Growth Temperature Dependence”,  R.L. Headrick and J.-M. Baribeau, J. Vac. Sci. Technol. A 13, 782 (1995).

33. “Nature and Evolution of Interfaces in Si/Si_1-xGe_x Superlattices”,  J.-M. Baribeau and R.L. Headrick,  Journal of Electronic Materials, 24, 341 (1995).

34.  “Anisotropic Roughness in Si_1-xGe_x/Si Superlattices”,   R.L. Headrick, J.-M. Baribeau, and Y.E. Strausser,  Appl. Phys. Lett., 66, 96, (1995).

35. “Critical Fluctuations in Membranes”,   Ruitian Zhang, Wenjun Sun, Stephanie Tristram-Nagle, R.L. Headrick, Robert M. Suter and John F. Nagle, Phys. Rev. Lett. 74, 2832 (1995).

36. “Electron microscopy of the ordered boron 2´1 structure buried in crystalline silicon”,  B.E. Weir, D.J. Eaglesham, L.C. Feldman, H.S. Luftman and R.L. Headrick, Applied Surface Science, 84, 413 (1995).

37. “Ordered Delta Doping”, R.L. Headrick, B.E. Weir, and  L.C. Feldman, in Delta Doping of Semiconductors, E.F. Schubert, ed. (Cambridge University Press, 1996.)

38. “Small-angle x-ray scattering from lipid bilayers is well described by modified Caille theory but not by paracrystalline theory”,  R. Zhang, S. Tristram-Nagle, W. Sun, R.L. Headrick, T.C. Irving, R.M. Suter, and J.F. Nagle, Biophys. J. 70, 349 (1996).

39. “Real-time x-ray-scattering measurement of the nucleation kinetics of cubic gallium nitride on β-SiC(001)”,  R.L. Headrick, S. Kycia, Y.K. Park, A.R. Woll, and J.D. Brock, Phys. Rev. B 54, 14686 (1996).

40. “Real-time X-ray scattering studies of thin-film growth and processing”, R.L.  Headrick, AIP Conference Proceedings, 417, 195 (1997).

41. “X-ray scattering study of the surface morphology of Au(111) during Ar⁺ ion irradiation”,  M.V. Ramana Murty, T. Curcic, A. Judy, B.H. Cooper, A.R. Woll, J.D. Brock, S. Kycia, and R.L. Headrick, Phys. Rev. Lett 80, 4713 (1998).

42. “Ion-assisted nucleation and growth of GaN on Sapphire(0001)”,  R.L. Headrick, S. Kycia, A.R. Woll, J.D. Brock, M.V. Ramana Murty, Phys. Rev. B 58, 4818 (1998).

43. “Specular and diffuse x-ray scattering from tungsten/carbon multilayers having a high reflectivity at 10 keV”,  A. Macrander, R.L. Headrick, C. Lui, A. Khounsary, K. Smolenski, S. Krasnicki, J. Maj, and J. Erdmann, Proceedings of the SPIE, 3448, 291 (1998).

44. “Water-cooled multilayer optics for a wiggler beamline”,  K.W. Smolenski, R.L. Headrick, Q. Shen, B. Carroll, A. Khounsary, C. Liu, A. Macrander, Proceedings of the SPIE, 3448, 27 (1998).

45. “Real-time x-ray scattering study of surface dynamics on Au(111) during Ar⁺ ion irradiation”,  M.V. Ramana Murty, T. Curcic, A. Judy, B.H. Cooper, A.R. Woll, J.D. Brock, S. Kycia, and R.L. Headrick, Mechanisms and Principles of Epitaxial Growth in Metallic Systems, Mater. Res. Soc; Warrendale, PA, USA, p.195 (1999).

46. “Roughening of Au(111) surfaces during ion beam erosion: a scanning tunneling microscope and X-ray diffraction study”,  Judy, A.; Ramana Murty, M.V.; Butler, E.; Pomeroy, J.; Cooper, B.H.; Woll, A.R.; Brock, J.D.; Kycia, S.; Headrick, R.L.,  Epitaxial Growth-Principles and Applications, Mater. Res. Soc.; Warrendale, PA, USA, p.61 (1999)

47. “Nucleation and growth of GaN on sapphire (0001): incorporation and interlayer transport”, A.R. Woll, R.L. Headrick, S. Kycia, and J.D. Brock, Physical Review Letters 83, 4349 (1999).

48. “The effect of crystalline domain size on the photophysical properties of thin organic molecular films”, A.J. Mäkinen,  A.R. Melnyk, S. Schoemann, R.L. Headrick, Y. Gao,  Physical Review B 60, 14683 (1999).

49. “Real-time x-ray scattering study of surface morphology evolution during ion erosion and epitaxial growth of Au(111)”, M.V.R. Murty, T. Curcic, A. Judy, B.H. Cooper, A.R. Woll, J.D. Brock, S. Kycia, and R.L. Headrick, Physical Review B 60, 16956 (1999).

50. “Clarification of the ripple phase of lecithin bilayers using fully hydrated, aligned samples”, J. Katsaras, S. Tristram-Nagle, Y. Liu, R.L. Headrick, E.  Fontes, P.C.  Mason, J.F. Nagle, Physical Review E 61, 5668 (2000).

51. “Revisiting the ripple phase using fully hydrated, aligned DPPC multibilayers”, J. Katsaras S. Tristram-   Nagle, Y.  Liu R.L.  Headrick, E.  Fontes, P.C.  Mason, J.F.  Nagle, Biophysical Journal  78, 116 (2000).

52. “Persistent layer-by-layer sputtering of Au(111)”, M.V.R. Murty, A.J. Couture, B.H. Cooper, A.R. Woll, J.D. Brock, and R.L. Headrick,  Journal of Applied Physics  88,  597 (2000).

53. “Sagittally focusing multilayers for wiggler beamlines”, K.W. Smolenski, R. L. Headrick, C. Liu,  A.T. Macrander, To be published in the Proceedings of the SPIE (2001).

54. “Roughness in sputtered multilayers analyzed by transmission electron microscopy and X-ray diffuse scattering”, A.T. Macrander, C. Liu, R. Csencsits, R.  Cook, M.  Kirk, and R.  Headrick, Physica B  283, 157 (2000).

55. “Orientation of pentacene films using surface alignment layers and its influence on thin film transistor characteristics”, M.L. Swiggers, G. Xia, J.D. Slinker, A.A. Gorodetsky, G.G. Malliaras, R.L. Headrick, C. Dulcey and R.N. Shashidhar, Applied Physics Letters, 79, 1300 (2001).

56. “Time-Resolved X-Ray Scattering Study of Co Surface Evolution during Low-Energy Ion Irradiation”, O. Malis, J. M. Pomeroy, R. L. Headrick, and J. D. Brock;  Ion Beam Synthesis and Processing of Advanced Materials, Mater. Res. Soc.; Warrendale, PA, USA. (To be published, 2001)

57. “Ion-induced pattern formation on Co surfaces: an x-ray scattering and Kinetic Monte Carlo study”, O. Malis, J.D. Brock, R. L. Headrick, Min-Su Yi, and J.M. Pomeroy, submitted to Physical Review b, 2001.